Tiancheng Semiconductor makes a new breakthrough in 12 inch SiC

In October 2025, Tiancheng Semiconductor announced a major breakthrough in the research and development of 12 inch silicon carbide. Relying on self-developed long crystal equipment, it successfully produced high-purity semi insulating and N-type 12 inch SiC single crystals. The effective thickness of N-type crystals exceeded 35mm, and the self-developed equipment can produce a maximum of 350mm single crystals. At the same time, it has mastered the mature preparation process of two types of single crystals.

 
The enterprise was established in 2021, deeply engaged in the research and development and manufacturing of silicon carbide substrates and long crystal equipment, with a clear pace of technological iteration: achieving small batch production of 6-inch SiC ingots by 2022; Breakthrough 8-inch technology by 2023; By 2024, achieve 8-inch mass production with thickness uniformity error controlled within 2 microns. By July 2025, we have taken the lead in conquering the core process of 12 inch N-type SiC, innovating the resistance furnace process to break through the bottleneck of growth rate in the industry, significantly reducing the density of microtubes, and achieving a yield rate of 65%. At present, the company has established a complete production line from single crystal furnace, powder preparation to large-scale crystal growth and processing, achieving independent and controllable SiC full process technology, and consolidating the core competitiveness of the localization of third-generation semiconductor substrates